rev.1.00, jun.14.2004, page 1 of 8 BB505M build in biasing circuit mos fet ic uhf rf amplifier rej03g0365-0100z rev.1.00 jun.14.2004 features ? build in biasing circu it; to reduce using parts cost & pc board space. ? low noise; nf = 1.5 db typ. at f = 900 mhz ? high gain; pg = 24 db typ. at f = 900 mhz ? withstanding to esd; build in esd absorbing diode. withstand up to 190 v at c = 200 pf, rs = 0 conditions. ? provide mini mold packages; mpak-4 (sot-143mod) outline mpak-4 1 4 3 2 1. source 2. gate1 3. gate2 4. drain notes: 1. marking is ?es-?. 2. BB505M is individual type number of renesas bbfet. absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v ds 6v gate1 to source voltage v g1s +6 ?0 v gate2 to source voltage v g2s +6 ?0 v drain current i d 20 ma channel power dissipation pch note3 300 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 3. value on the glass epoxy board (50 mm 40 mm 1 mm ).
BB505M rev.1.00, jun.14.2004, page 2 of 8 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6??vi d = 200 a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +6 ? ? v i g1 = +10 a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6 ? ? v i g2 = +10 a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss ? ? +100 na v g1s = +5 v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss ? ? +100 na v g2s = +5 v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.5 0.7 1.0 v v ds = 5 v, v g2s = 4 v, i d = 100 a gate2 to source cutoff voltage v g2s(off) 0.5 0.7 1.0 v v ds = 5 v, v g1s = 5 v, i d = 100 a drain current i d(op) 71115ma v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 220 k ? forward transfer admittance |y fs |283338ms v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 220 k ? , f = 1 khz input capacitance c iss 1.4 1.75 2.1 pf output capacitance c oss 1.0 1.4 1.8 pf reverse transfer capacitance c rss ? 0.03 0.05 pf v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 220 k ?, f = 1 mhz power gain pg 19 24 29 db noise figure nf ? 1.5 2.2 db v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 220 k ?, f = 900 mhz bias circuit for operating items (i d(op) , |y fs |, ciss, coss, crss, nf, pg) gate 1 source drain gate 2 r g a i d v g2 v g1
BB505M rev.1.00, jun.14.2004, page 3 of 8 900 mhz power gain, noi se figure test circuit input ( 50 ? ) output ( 50 ? ) c2 c1 l1 l2 l3 l4 s g1 g2 r1 r2 c3 r3 rfc c6 c5 c4 d v g2 v g1 v d c1, c2 c3 c4 to c6 r1 r2 r3 variable capacitor (10 pf max) disk capacitor (1000 pf) air capacitor (1000 pf) 220 k ? 47 k ? 4.7 k ? : : : : : : 26 3 3 l2: 18 10 10 l4: 29 7 7 l3: ( 1mm copper wire) unit : mm rfc : 1mm copper wire with enamel 4 turns inside dia 6 mm 21 10 8 l1: 10
BB505M rev.1.00, jun.14.2004, page 4 of 8 main characteristics drain to source voltage v ds (v) drain current i d (ma) typical output characteristics gate1 voltage v g1 (v) drain current i d (ma) drain current vs. gate1 voltage gate1 voltage v g1 (v) forward transfer admittance |y fs | (ms) forward transfer admittance vs. gate1 voltage channel power dissipation pch * (mw) maximum channel power dissipation curve ambient temperature t a ( c) * value on the glass epoxy board (50mm 40mm 1mm) gate resistance r g (k ? ) drain current i d (ma) drain current vs. gate resistance gate2 to source voltage v g2s (v) input capacitance ciss (pf) input capacitance vs. gate2 to source voltage 400 300 200 100 0 50 100 150 200 0 1 2345 v ds = 5 v r g = 220 k ? 2 v v g2s = 1 v 20 15 10 5 3 v 4 v 0 100 200 500 1000 v ds = 5 v v g1 = 5 v v g2s = 4 v 5 10 15 20 0 1 2345 20 v g2s = 4 v v g1 = v ds r g = 120 k ? 150 k ? 180 k ? 220 k ? 270 k ? 330 k ? 15 10 5 50 40 30 20 10 0 12345 v g2s = 1 v 4 v 3 v 2 v v ds = 5 v v g1 = 5v r g = 220 k ? f = 1 khz 0 1 2 34 4 3 2 1 0 v ds = 5 v v g1 = 5 v r g = 220 k ? f = 1 mhz
BB505M rev.1.00, jun.14.2004, page 5 of 8 noise figure nf (db) noise figure vs. gate resistance gate2 to source voltage v g2s (v) power gain vs. gate2 to source voltage noise figure vs. gate2 to source voltage power gain pg (db) power gain vs. gate resistance gate resistance r g (k ? ) 0 100 200 500 1000 v ds = 5 v v g1 = 5 v v g2s = 4 v f = 900 mhz 50 40 30 20 10 power gain pg (db) 25 20 15 10 5 0 1234 v ds = 5 v v g1 = 5 v r g = 220 k ? f = 900 mhz gain reduction gr (db) 0 1234 10 20 30 40 v ds = 5 v v g1 = 5 v r g = 220 k ? f = 900mhz noise figure nf (db) gate2 to source voltage v g2s (v) 0 4 3 2 1 100 200 500 1000 v ds = 5 v v g1 = 5 v v g2s = 4 v f = 900 mhz 5 4 3 2 1 1 2 34 0 v ds = 5 v v g1 = 5 v r g = 220 k ? f = 900 mhz gate resistance r g (k ? ) gain reduction vs. gate2 to source voltage gate2 to source voltage v g2s (v)
BB505M rev.1.00, jun.14.2004, page 6 of 8 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 0 30 60 90 120 150 180 -150 -90 -60 -30 -120 30 60 90 120 150 180 -150 -90 -60 -30 -120 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 1 / div. scale: 0.02 / div. 0 condition: v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 220 k ? , zo = 50 ? 50 to 1000 mhz (50 mhz step) condition: v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 220 k ? , zo = 50 ? 50 to 1000 mhz (50 mhz step) condition: v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 220 k ? , zo = 50 ? 50 to 1000 mhz (50 mhz step) condition: v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 220 k ? , zo = 50 ? 50 to 1000 mhz (50 mhz step) s 11 parameter vs. frequency s 21 parameter vs. frequency s 12 parameter vs. frequency s 22 parameter vs. frequency
BB505M rev.1.00, jun.14.2004, page 7 of 8 s parameter (v ds = 5 v, v g1 = 5 v, v g2s = 4 v, r g = 200 k ? , z o = 50 ? ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 50 0.991 -2.4 3.55 178.2 0 .009 -64.5 0.976 -1.8 100 0.991 -5.9 3.58 172.9 0 .011 18.0 0.995 -3.1 150 0.993 -8.9 3.58 170.2 0 .002 61.4 0.990 -5.2 200 0.983 -11.9 3.56 165. 9 0.004 77.7 0.986 -6.5 250 0.977 -15.3 3.59 162. 6 0.006 87.6 0.986 -8.2 300 0.969 -18.5 3.50 155.5 0 .008 87.8 0.990 -12.9 350 0.962 -21.6 3.51 151.0 0 .006 94.6 0.984 -15.1 400 0.952 -25.2 3.52 146.9 0 .007 80.9 0.982 -17.3 450 0.944 -28.7 3.52 142.6 0 .008 87.1 0.977 -19.5 500 0.929 -32.2 3.51 138.2 0 .008 78.1 0.973 -21.8 550 0.914 -36.0 3.51 133.4 0 .008 74.7 0.968 -24.0 600 0.897 -40.0 3.50 129.0 0 .008 84.8 0.963 -26.1 650 0.881 -44.2 3.49 124.2 0 .010 72.6 0.957 -28.2 700 0.863 -48.3 3.47 119.4 0 .010 67.5 0.950 -30.4 750 0.842 -52.7 3.45 114.5 0 .008 78.7 0.943 -32.6 800 0.819 -57.3 3.41 109.7 0 .008 82.1 0.939 -34.6 850 0.797 -62.0 3.37 104.9 0 .008 85.3 0.931 -36.6 900 0.775 -66.8 3.33 99.9 0 .008 95.6 0.924 -38.7 950 0.746 -71.8 3.27 94.9 0 .007 97.4 0.916 -40.6 1000 0.721 -76.9 3.20 90. 2 0.007 122.8 0.909 -42.4
BB505M rev.1.00, jun.14.2004, page 8 of 8 package dimensions 0.16 0 ? 0.1 + 0.1 ? 0.06 0.95 0.85 1.8 0.2 0.65 1.5 0.15 0.65 1.1 + 0.2 ? 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.4 + 0.1 ? 0.05 0.6 + 0.1 ? 0.05 2.8 + 0.2 ? 0.6 0.3 0.4 + 0.1 ? 0.05 package code jedec jeita mass (reference value) mpak-4 ? conforms 0.013 g 0.4 + 0.1 ? 0.05 as of january, 2003 unit: mm ordering information part name quantity shipping container BB505Mes- 3000 taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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